Deposition of Diamond-Like carbon Films by High-Intensity Pulsed Ion Beam Ablation at Various Substrate Temperatures |
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作者姓名: | 梅显秀 刘振民 马腾才 董闯 |
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作者单位: | StateKeyLaboratoryofMaterialsModification,DalianUniversityofTechnology,Dalian116024 |
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摘 要: | Diamond-like carbon (DLC) films have been deposited on to Si substrates at substrate temperatures from 255℃ to 400O℃ by a high-intensity pulsed-ion-beam (HIPIB) ablation deposition technique. The formation of DLC is confirmed by Raman spectroscopy. According to an x-ray photoelectron spectroscopy analysis, the concentration of sp^3 carbon in the films is about 40% when the substrate temperature is below 300℃ C. With increasing substratetemperature from 25℃ to 400℃, the concentration of sp^3 carbon decreases from 43% to 8%. In other words,sp3 carbon is graphitized into sp^2 carbon when the substrate temperature is above 300℃. The results of xray diffraction and atomic force microscopy show that, with increasing the substrate temperature, the surface roughness and the friction coefficient increase, and the microhardness and the residual stress of the films decrease.
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关 键 词: | 类金刚石碳膜 薄膜沉积 HIPIB 高强度脉冲离子束刻蚀 温度 X射线光电子光谱分析 拉曼光谱 |
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