| 温梯法白宝石晶体的缺陷研究 |
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| 引用本文： | 李抒智,周圣明,司继良,周国清,董永军,徐军. 温梯法白宝石晶体的缺陷研究[J]. 人工晶体学报, 2003, 32(5): 491-494 |
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| 作者姓名： | 李抒智 周圣明 司继良 周国清 董永军 徐军 |
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| 作者单位： | 中国科学院上海光学精密机械研究所,上海,201800 |
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| 摘 要： | 采用导向温梯法(TGT)生长出[0001]方向直径为76mm的白宝石晶体.利用扫描电子显微镜(SEM)观察晶体(0001)面的腐蚀坑形态,并对晶体内部的包裹物进行了能谱(EDS)分析.白宝石晶体中的生长缺陷主要为位错和包裹体等.Al2O3晶体(0001)面的位错腐蚀坑呈六角形,并且有台阶状结构.分析了(0001)面内的位错类型.确定了TGT法生长的白宝石内部的包裹物的主要成分为碳.
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| 关 键 词： | 白宝石 温梯法 位错 化学腐蚀 包裹物, |
| 文章编号： | 1000-985X(2003)05-0491-04 |
| 修稿时间： | 2003-06-10 |
Defect Study of Sapphire Crystal Grown by Temperature Gradient Technique |
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| LI Shu-zhi,ZHOU Sheng-ming,SI Ji-liang,ZHOU Guo-qing,DONG Yong-jun,XU Jun. Defect Study of Sapphire Crystal Grown by Temperature Gradient Technique[J]. Journal of Synthetic Crystals, 2003, 32(5): 491-494 |
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| Authors: | LI Shu-zhi ZHOU Sheng-ming SI Ji-liang ZHOU Guo-qing DONG Yong-jun XU Jun |
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| Abstract: | High quality sapphire crystal oriented along [ 0001 ] was grown by the temperature gradient technique. The etch pits in (0001) plane were observed by scanning electron microscope (SEM), and the inclusions were analyzed by energy dispersive spectroscopy (EDS). The defects observed in as-grown crystal mainly originate from dislocations and inclusions. The shape of etch pits located in (0001) plane of Al2O3 crystal exhibits as a hexagon with sidestep-like structure. The type of dislocations of (0001) slices was studied by SEM images. The components of inclusions in sapphire crystal grown by TGT method are identified as carbon. |
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| Keywords: | sapphire crystal temperature gradient technique (TGT) dislocation chemical etch inclusion |
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