CBE growth of GaAs/GaAs, GaAs/Si and AlGaAs/GaAs using TEG, AsH3 and amine-alane precursors |
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| Authors: | T. B. Joyce T. J. Bullough P. Kightley C. J. Kiely Y. R. Xing P. J. Goodhew |
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| Affiliation: | Department of Materials Science and Engineering, The University of Liverpool, P.O. Box 147, Liverpool L69 3BX, UK |
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| Abstract: | The growth of high quality AlGaAs by CBE has been limited by the high levels of carbon and oxygen contamination. The use of alane based precursors offers a significant reduction in such contamination. We report for the first time the CBE growth of AlxGa1−xAs from triethylgallium, dimethylethylamine-alane and arsine, and compare with. growth from triethylgallium, trimethylamine-alane and arsine. Some preliminary results of work on the CBE growth of GaAs on silicon will also be reported. |
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