Interfaces under ion irradiation: growth and taming of nanostructures

We have investigated the synthesis of nanostructures, as well as the control of their size and location by means of ion beams. The phase separation and interface kinetics under ion irradiation give new possibilities for controlling the growth of nanostructures. Additionally, the chemical decomposition of the host matrix by collisional mixing can contribute to the self-organization of nanostructures, especially at interfaces. It is shown how collisional mixing during ion implantation affects nanocrystal (NC) synthesis and how ion irradiation through NCs modifies their size and size distribution. An analytical expression for solute concentration around an ion-irradiated NC was found, which may be written like the well-known Gibbs–Thomson relation. However, parameters have modified meanings, which has a significant impact on the evolution of NC ensembles. “Inverse Ostwald ripening” of NCs, resulting in an unimodal NC size distribution, is predicted, which has been confirmed experimentally for Au NCs in SiO₂ and by kinetic lattice Monte Carlo simulations. At interfaces, the same ion-irradiation-induced mechanism may result in self-organization of NCs into a thin δ-layer. Collisional decomposition of SiO₂ may enhance the NC δ-layer formation in SiO₂ at the Si/SiO₂ interface. The distance of the self-organized NC δ-layer from the SiO₂/Si interface renders the structure interesting for non-volatile memory applications. Received: 11 November 2002 / Accepted: 12 November 2002 / Published online: 4 April 2003 RID="*" ID="*"Corresponding author. Fax: +49-351-260-3285, E-mail: K.-H.Heinig@fz-rossendorf.de