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P掺杂单壁硅纳米管Mg原子吸附性能的第一性原理研究
引用本文:周爽,刘贵立,姜艳,宋媛媛. P掺杂单壁硅纳米管Mg原子吸附性能的第一性原理研究[J]. 计算物理, 2016, 33(5): 554-560. DOI: 10.3969/j.issn.1001-246X.2016.05.006
作者姓名:周爽  刘贵立  姜艳  宋媛媛
作者单位:沈阳工业大学建筑与土木工程学院, 沈阳 110870
基金项目:国家自然科学基金(51371049),辽宁省自然科学基金(20102173)
摘    要:采用密度泛函理论的广义梯度近似和平面波赝势方法,研究P掺杂单壁硅纳米管对Mg原子的吸附性能.计算本征、掺杂P、施加形变作用(压缩和拉伸)的(6,6)硅纳米管外壁对Mg原子的吸附能,分析掺杂P前后的成键情况及电荷布局数.结果表明,掺杂P使体系形成Mg-P和Si-P间的离子性键,增强了Si-Si间的离子性键,P掺杂硅纳米管超晶格中离子键与共价键共存;掺杂P后显著提高了硅纳米管外壁对Mg原子的吸附能力;硅纳米管外壁对Mg原子的吸附能在0.25%,0.50%,1.00%,1.25%的压缩量和1.00%,1.25%的拉伸量时增大,可显著增强硅纳米管材料作为增强相时与基体界面间结合的粘附性.

关 键 词:密度泛函理论  单壁硅纳米管  P掺杂  Mg原子吸附  
收稿时间:2015-11-30
修稿时间:2016-03-02

Adsorbing of Magnesium on Phosphorus-Doping Single-Walled Silicon Nanotubes: First-principles Study
ZHOU Shuang,LIU Guili,JIANG Yan,SONG Yuanyuan. Adsorbing of Magnesium on Phosphorus-Doping Single-Walled Silicon Nanotubes: First-principles Study[J]. Chinese Journal of Computational Physics, 2016, 33(5): 554-560. DOI: 10.3969/j.issn.1001-246X.2016.05.006
Authors:ZHOU Shuang  LIU Guili  JIANG Yan  SONG Yuanyuan
Affiliation:College of Architecture and Civil Engineering, Shenyang University of Technology, Shenyang 110870, China
Abstract:Adsorption characteristics of magnesium atoms on phosphorus-doped single-walled silicon nanotubes (SWSiNTs) are studied using plane wave pseudopotential method with generalized gradient approximation based on density functional theory. Adsorption energies of magnesium atoms on pure,phosphorus-doped and deformation effects (compressive or tensile) (6,6) SWSiNTs are calculated. Bond and Mulliken population of both pure and phosphorus-doped SWSiNTs are also analyzed.It shows that covalent bond and ionic bond conexist in armchair silicon nanotube superlattices doped with phosphorus atoms by forming ionic bond of Mg-P and Si-P,and enhancing ionic bond of Si-Si. Adsorption energy of Mg atom on SWSiNTs are improved significantly by doping phosphorus atoms. Adsorption energy are also increased under compressive deformation at 0.25%,0.50%,1.00%,1.25% and tensile deformation at 1.00%,1.25%. It enhances adhesion of interface of silicon nanotubes as reinforce combined with matrix.
Keywords:first-principles  single-walled silicon nanotubes  phosphorus-doping  adsorption of magnesium atom
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