The local atomic structures in Si1−x Ge x random solid solutions |
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Authors: | Wu Zhonghua Lu Kunquan Wang Dewu Liu Jianfei Jiang Haiyin |
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Affiliation: | (1) Synchrotron Radiation Laboratory, Institute of High Energy Physics, Chinese Academy of Sciences, 100039 Beijing, People's Republic of China;(2) Institute of Physics, Chinese Academy of Sciences, 100080 Beijing, People's Republic of China |
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Abstract: | The local structures of Si1?x Ge x solid solutions can be described with FDUC model (the five distorted unit cells) based on a phenomenological valence force field approach. Bond lengths and strain energies in these solid solutions can be predicted. The distorted feature of the local structure is well described by the five distorted unit cells. Calculated results are compared with those obtained from EXAFS, indicating the excellent agreement between theoretical predictions and EXAFS measurements with the largest divergence not larger than 0.01 Å. In addition, The relationship betweenSi 1?x Ge x and III–V random solid solutions is also discussed. |
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Keywords: | 61.50.Em 05.50+q 882.20.Fd 65.50.+m |
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