The local atomic structures in Si1−x Ge x random solid solutions

The local structures of Si_1?x Ge _x solid solutions can be described with FDUC model (the five distorted unit cells) based on a phenomenological valence force field approach. Bond lengths and strain energies in these solid solutions can be predicted. The distorted feature of the local structure is well described by the five distorted unit cells. Calculated results are compared with those obtained from EXAFS, indicating the excellent agreement between theoretical predictions and EXAFS measurements with the largest divergence not larger than 0.01 Å. In addition, The relationship betweenSi _1?x Ge _x and III–V random solid solutions is also discussed.