Interwell radiative recombination in the presence of random potential fluctuations in GaAs/AlGaAs biased double quantum wells |
| |
| Authors: | V. B. Timofeev A. V. Larionov A. S. Ioselevich J. Zeman G. Martinez J. Hvam K. Soerensen |
| |
| Affiliation: | (1) Institute of Solid State Physics Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region, Russia;(2) Landau Institute of Theoretical Physics, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region, Russia;(3) High Field Magnetic Laboratory, MPI-FKF and CNRS, 38042 Grenoble, France;(4) Microelectronic Centre, Lyngby, Denmark |
| |
| Abstract: | The interwell radiative recombination from biased double quantum wells (DQW) in pin GaAs/AlGaAs heterostructures is investigated at different temperatures and external electrical fields. The luminescence line of interwell recombination of spatially separated electron-hole pairs exhibits systematic narrowing with temperature increase from 4.5 to 30 K. A theoretical model is presented which explains the observed narrowing in terms of lateral thermally activated tunneling of spatially separated e-h pairs localized by random potential fluctuations in the quantum wells. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 8, 580–585 (25 April 1998) Published in English in the original Russian journal. Edited by Steve Torstveit. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
