Physical vapor deposition of SnS:PbS-dithiocarbamate chalcogenide semiconductor thin films: elucidation of optoelectronic and electrochemical features |
| |
Authors: | Aimen Zafar Shaan Bibi Jaffri Manzar Sohail |
| |
Institution: | 1. Department of Environmental Sciences, Fatima Jinnah Women University, Rawalpindi, Pakistan;2. Department of Environmental Sciences, Fatima Jinnah Women University, Rawalpindi, Pakistan https://orcid.org/0000-0003-3939-5591;3. School of Natural Science, National University of Sciences and Technology (NUST), Islamabad, Pakistan |
| |
Abstract: | Abstract This work reports the first investigation on the physical vapor deposition of thin films of tin sulfide doped lead sulfide (SnS:PbS). In-situ synthesis route using diethyldithiocarbamate (DTC) ligand was adopted for SnS-DTC, PbS-DTC and SnS:PbS-DTC complex formation. PbS-DTC and SnS:PbS-DTC expressed an average crystallite size of 30.98 and 29.74?nm, respectively shown by X-ray diffraction (XRD) analysis. A face centered cubic geometry was revealed from XRD. Ultraviolet visible spectrophotometry expressed a direct and indirect band gap of 3.4 and 3.2?eV, respectively for SnS:PbS-DTC. A smooth morphology with presence of larger agglomerated particles was disclosed by scanning electron microscopy for SnS:PbS-DTC thin films with 615?nm thickness. SnS:PbS-DTC thin films expressed remarkable electrochemical behavior explored via cyclic voltammetry, linear sweep voltammetry and chronoamperometry showing an improvement in the photo-current response upon potential bias increment. The results of the current research indicated the potential of SnS:PbS-DTC thin films for utilization in different types of photovoltaic devices. |
| |
Keywords: | Bandgap dithiocarbamate photocurrent photovoltaics tin sulfide |
|
|