| Ambipolar Thin-Film Field-Effect Transistor Based on Pentacene |
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| 作者姓名： | 王伟 石家纬 梁昌 张宏梅 刘大明大 全宝富 郭树旭 方俊峰 马东阁 |
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| 作者单位： | [1]NationalKeyLaboratoryofIntegratedOptoelectronics,JilinUniversity,Changchun130012 [2]StateKeyLaboratoryofPolymerPhysicsandChemistry,ChangchunInstituteofAppliedChemistry,ChineseAcademyofSciences,Changchun130022 |
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| 摘 要： | Organic thin film field-effect transistors based on pentacene have been fabricated by the method of fully-evaporation. The present device with a thin insulator layer can operate in low voltage, and shows ambipolar mode. In the case of the p-channel, the field-effect hole mobility was calculated to be 0.17cm^2/Vs, whereas the field-effect electron mobility was about O.02 cm^2 /Vs for n-channeL
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| 关 键 词： | 二极薄膜场效应 晶体管 并五苯 有机化学 全蒸发法 电子迁移率 |
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