| 高功率无铝半导体激光器 |
| |
| 引用本文： | 杨进华,张兴德,任大翠.高功率无铝半导体激光器[J].半导体光电,2000,21(2):80-84. |
| |
| 作者姓名： | 杨进华 张兴德 任大翠 |
| |
| 作者单位： | 长春光学精密机械学院高功率半导体激光国家重点实验室,长春,130022 |
| |
| 摘 要： | ＩｎＧａＡｓＰ／ＧａＡｓ激光器抑制暗线缺陷的形成，器件的突然失效及缓慢退化有所减少。研究表明，高功率无铝半导体激光器比有铝ＡｌＧａＡ／ＧａＡｓ激光器具有更高的可靠性。文章分析比较了高功率有铝和无铝半导体激光器的优缺点，介绍了波长为８０８ｎｍ的高功能无铝半导体激光器的发展及国内外目前的研究状况。
|
| 关 键 词： | 半导体激光器 量子阱 砷化镓 铝 |
Al-free High Power Semiconductor Lasers |
| |
| YANG Jin-hua,ZHANG Xing-de,REN Da-cui.Al-free High Power Semiconductor Lasers[J].Semiconductor Optoelectronics,2000,21(2):80-84. |
| |
| Authors: | YANG Jin-hua ZHANG Xing-de REN Da-cui |
| |
| Abstract: | Study on comparison between AlGaAs/GaAs and InGaAsP/GaAs high power laser diodes indicates that Al-free lasers are more reliable due to a reduction of dark line defects,sudden failure and gradual degradation. In this presentation, the advantages of Al-free high power semiconductor lasers are discussed. The development of Al-free high power lasers emitted at 808 nm and the research situation both at home and abroad are introduced. |
| |
| Keywords: | semiconductor laser high power quantum well SCH |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
