Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates |
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Authors: | E V Lutsenko N V Rzheutskii V N Pavlovskii G P Yablonskii D V Nechaev A A Sitnikova V V Ratnikov Ya V Kuznetsova V N Zhmerik S V Ivanov |
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Institution: | 1. Stepanov Institute of Physics, National Academy of Sciences of Belarus, pr. Nezavisimosti 68, Minsk, 220072, Belarus 2. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia
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Abstract: | This paper reports on the results of investigations of the spontaneous and stimulated luminescence in AlGaN heterostructures with a single quantum well and a high Al content (up to ~80 mol % in barrier layers), which were grown by plasma assisted molecular beam epitaxy (PAMBE) on c-sapphire substrates. It has been demonstrated that the stimulated emission occurs in the mid-ultraviolet range of the spectrum at wavelengths of 259, 270, and 289 nm with threshold excitation power densities of 1500, 900, and 700 kW/cm2, respectively. It has been shown that there exists a possibility of TE polarization (E ⊥ c) of both stimulated and spontaneous luminescence down to wavelengths of 259 nm. |
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