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Characteristics of Al / p‐AgGaTe2 polycrystalline thin film Schottky barrier diode |
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| Authors: | S S Patel B H Patel T S Patel |
| Abstract: | An Al/p‐AgGaTe2 polycrystalline thin film schottky barrier diode have been prepared by flash‐evaporation of p‐AgGaTe2 onto a pre‐deposited film of aluminium. The current‐voltage, capacitance‐voltage and photoresponse of the diode have been investigated. The important physical parameter such as barrier height of the fabricated diode was derived from these measurements. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Keywords: | AgGaTe2 thin film Schottky barrier diode current‐voltage capacitance‐voltage photoresponse |