Growth of Bi2Sr2Cu1Ox films by laser ablation |
| |
| Institution: | 1. Groupe de Physique des Solides, CNRS UMR 7588, Universités Paris VII et Paris VI, Tour 23, 2, Place Jussieu, 75251 Paris Cedex 05, France;2. Laboratoire Microstructure et Mécanique des Matériaux, Ecole Nationale Supérieure des Arts et Métiers, 151 Boulevard de l''Hôpital, 75013 Paris, France;1. Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland;2. Moscow State University, 119899 Moscow, Russian Federation;3. Semiconductor Physics Institute, LT-2600 Vilnius, Lithuania |
| |
| Abstract: | The formation and the properties of thin BiSrCuO films grown on MgO single crystal substrates by the pulsed laser ablation of a Bi2Sr2Cu1O6 target have been studied. The precise influence of the oxygen pressure and substrate temperature on the atomic composition, nature and structure of the grown phases, crystalline quality and superconductivity of the films has been analyzed. In the 600–750°C temperature range and 0.05–0.5 mbar oxygen pressure range, highly textured films of the 2201 phase (Bi2Sr2Cu1O6 phase) were formed despite large composition deviations (Bi enrichment and Sr depletion) with respect to the ideal composition. A high crystalline quality was evidenced for films grown at low and intermediate pressure and high temperature. χmin values in the films deduced from channeling experiments were similar to the case of single crystal material. Despite this high crystalline quality, incomplete or very low Tc superconducting transitions were observed in the resistivity measurements. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
