| Abstract: | Chemical bonds of As‐implanted ZnO annealed in ozone molecular (O3) ambient were analyzed through the x‐ray photoelectron spectroscopy as a function of the etching depth. With the etching depth increased to 25 nm from surface, the peaks of Zn2p and O1s core levels shifted toward the low‐binding energy, and the bonding formation of As 3d core level gradually varied from As2O5 to As2O3. The new peaks were observed, which were posited to high‐binding energy of 4.4 eV from Zn2p and O1s core levels. Finally, the chemical bonds of As‐based oxides were found to consist of Zn(AsO3)2, As2O5, and As2O3. (© 2007 WILEY ‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
