Vacancy in 6H—Silicon Carbide Studied by Slow Positron Beam |
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作者姓名: | 王海云 翁惠民 杭德生 周先意 叶邦角 范扬眉 韩荣典 C.C.Ling Y.P.Hui |
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作者单位: | [1]DepartmentofModernPhysics,university,ofScienceandTechnologyofChina,Hefei230027 [2]DepartmentofPhysics,NanjingUniversity,nanjing210093 [3]DepartmentofPhysics,TheuniversityofHongKong,HongKong |
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摘 要: | The defect changes in 6H-SiC after annealing and 10MeV electron irradiation have been studied by using a variable-energy positron beam.It was found that after annealing,the defect concentration in n-type 6H-SiC decreased due to recombination with interstitials.When the sample was annealed at 1400℃ for 30 min in vacuum,a 20-nm thickness Si layer was found on the top of the SiC substrate,this is a direct proof of the Si atoms diffusing to surface when annealed at high temperature stages.After 10MeV electron irradiation,for n-type 6H-SiC,the S parameter increased from 0.4739 to 0.4822,and the relative positron-trapping rate was about 27.878 times of the origin sample,this shows that there are some defects created in n-type 6H-SiC.For p-type 6H-SiC,it is very unclear,this may be because of the opposite charge of vacancy defects.
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关 键 词: | 正电子束 6H-SiC 碳化硅 退火 半导体材料 空缺 |
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