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Spin-injection mechanism of magnetization reversal and hysteresis of current in magnetic junctions
Authors:Yu. V. Gulyaev  P. E. Zil'berman  É. M. Épshtein  R. J. Elliott
Affiliation:(1) Institute of Radio-Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow region, 141190, Russia;(2) Department of Physics, University of Oxford, Oxford, OX1, United Kingdom
Abstract:A novel mechanism is proposed for magnetization reversal by the current of magnetic junctions with two metallic ferromagnetic layers and thin separating nonmagnetic layer. The spin-polarized current flows perpendicularly to the interfaces between the ferromagnetic layers, in one of which the spins are pinned and in the other they are free. No domain structure is formed in the ferromagnetic layers. The current breaks spin equilibrium in the free layer, which manifests itself in the injection or extraction of spins. The nonequilibrium spins interact with the magnetization of the lattice due to the effective field of s-d exchange, which is current dependent. At currents exceeding a certain threshold value, this interaction leads to magnetization reversal. Two threshold currents for magnetization reversal have been obtained theoretically, which are reached as the current increases or decreases, respectively. Thus, the phenomenon of current hysteresis is found. The calculated results are in good agreement with experiments on magnetization reversal by current in three-layer junctions of composition Co(I)/Cu/Co(II) prepared in a pillar form.
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