Study on the spectral response of the Schottky photodetector of GaN

The Schottky photodetector was fabricated on GaN epilayers grown bymetalorganic chemical vapour deposition (MOCVD). The spectral response of theSchottky photodetector was characterized. A new model is proposed tointerpret the characteristic of the spectral response curve of the Schottkyphotodetectors by introducing a penetrating distance of an incident light ata certain wavelength in the current continuity equation and the interfacerecombination at the metal--semiconductor rectifying contact. The expressionsfor the spectral response of the Schottky photodetector are deduced and usedsuccessfully to fit the experimental data.