Interaction of magnetostatic waves with current carriers in stratified structures

The interaction of magnetostatic waves with charge carriers in ferrite-semiconductor and ferrite-electron flux structures is reviewed. The basic equations needed to calculate the interaction effects in these structures are provided. Attention is turned to the possibility of amplifying fast magnetostatic waves in bodies of revolution by means of circular electron drift over the body surface. The possibility is discussed of amplifying magnetostatic waves in a ferrite film by an electron flux band. The interaction of magnetoelastic waves with electrons in ferrite-semiconductor structures is considered. A method of calculating the static EMF (electromotive force), induced by traveling MSW (magnetostatic waves) in a ferrite-semiconductor structure, is discussed. Attention is turned to circular currents, flowing in the semiconductor, which can vary substantially the longitudinal EMF and lead to generation of a transverse EMF in the structure. We discuss experimental studies on detection of interaction of magnetostatic waves with charge carriers, suggesting the possibility of wave amplification in ferrite-semiconductor and ferrite-electron flux structures, and exploring EMF induction mechanisms in the regime of traveling waves and ferromagnetic resonance.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 5–29, January, 1989.