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Tuning surface charge property by floating gate field effect transistor
Authors:Xue Song  Hu Ning  Qian Shizhi
Institution:Institute of Micro/Nanotechnology, Old Dominion University, Norfolk, VA 23529, USA.
Abstract:Tuning surface charge property by a floating gate field effect transistor (FGFET) is proposed and analyzed for the first time. The FGFET has an additional floating gate electrode embedded inside the dielectric channel wall and is superior to the conventional FET to tune the surface charge property of a dielectric material in contact with an aqueous solution.
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