Ditopic complexes of silene H2SiCH2 with bidentate ligands Me2NCH2SiHnF3-n. Structures, formation energies, AIM and ELF analyses. |
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Authors: | Vitaly G. Avakyan Evgeniya P. Doronina Valery F. Sidorkin |
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Affiliation: | a Topchiev Institute of Petrochemical Synthesis, Russian Academy of Sciences, Leninsky Prospect, 29, 119991 GSP-1, Moscow, Russiab Photochemistry Center, Russian Academy of Sciences, Novatorov, 7a, 117421 Moscow, Russiac A. E. Favorsky Irkutsk Institute of Chemistry, Siberian Branch of the Russian Academy of Sciences, Favorsky, 1, 664033 Irkutsk, Russia |
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Abstract: | Ditopic complex formation of silene H2SiCH2 with bidentate ligands Me2NCH2SiHnF3-n (n = 0-3) was studied at the MP4(SDQ(T)6-311G(d,p))//MP2/6-31G(d,p) levels of theory. The AIM and ELF analyses have shown that π-bonding in the silenic Si1C moiety in the relatively weak (H2Si1CH2)·(Me2NCH2Si2HnF3-n) (n = 2, 3) ditopic complexes is partially preserved. |
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Keywords: | Ab initio calc. Silene Bidentate ligand Ditopic complex AIM and ELF analyses |
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