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Ditopic complexes of silene H2SiCH2 with bidentate ligands Me2NCH2SiHnF3-n. Structures, formation energies, AIM and ELF analyses.
Authors:Vitaly G. Avakyan  Evgeniya P. Doronina  Valery F. Sidorkin
Affiliation:
  • a Topchiev Institute of Petrochemical Synthesis, Russian Academy of Sciences, Leninsky Prospect, 29, 119991 GSP-1, Moscow, Russia
  • b Photochemistry Center, Russian Academy of Sciences, Novatorov, 7a, 117421 Moscow, Russia
  • c A. E. Favorsky Irkutsk Institute of Chemistry, Siberian Branch of the Russian Academy of Sciences, Favorsky, 1, 664033 Irkutsk, Russia
  • Abstract:Ditopic complex formation of silene H2Sidouble bond; length as m-dashCH2 with bidentate ligands Me2NCH2SiHnF3-n (n = 0-3) was studied at the MP4(SDQ(T)6-311G(d,p))//MP2/6-31G(d,p) levels of theory. The AIM and ELF analyses have shown that π-bonding in the silenic Si1C moiety in the relatively weak (H2Si1double bond; length as m-dashCH2)·(Me2NCH2Si2HnF3-n) (n = 2, 3) ditopic complexes is partially preserved.
    Keywords:Ab initio calc.   Silene   Bidentate ligand   Ditopic complex   AIM and ELF analyses
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