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An equivalent circuit model for microwave-biased extrinsic photoconductors1 |
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| Affiliation: | 1. Institute of Neurosciences, The Fourth Military Medical University, Xi''an 710032, PR China;2. Department of Pathology and Pathophysiology, The Fourth Military Medical University, Xi''an 710032, PR China;3. School of Biomedical Sciences, The University of Hong Kong, Hong Kong, China;4. Department of Cell Biology, Neurobiology and Anatomy, Medical College of Wisconsin, Milwaukee, WI 53226, USA |
| Abstract: | An equivalent circuit model for microwave-biased extrinsic photoconductors is introduced. Theoretical performance results calculated from the model are compared to experimental values of a microwave-biased mercury-doped germanium photoconductor operating at high background photon irradiance levels. The comparison indicates that the equivalent circuit model is adequate to describe the performance of microwave-biased extrinsic photoconductors. Experimental and theoretical results indicate that microwave-biased extrinsic photoconductors are high gain (G ∼104) devices with a simultaneous submicrosecond speed of response. |
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