Low noise Schottky barrier diode mixers for wavelengths < 1 mm |
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| Affiliation: | 1. University of Tsukuba, Japan;2. Texas A&M University, United States;3. University of Kansas, United States;4. University of Utah, United States;5. The University of Texas at San Antonio, United States |
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| Abstract: | Recent progress in realizing low noise Schottky diode mixers in the submillimetre region is reviewed. Schottky diodes built on epitaxial material must be carefully optimized through use of E-beam lithography to obtain lowest conversion loss in a particular frequency region. Satisfactory diplexing schemes exist and a number of promising mixer configurations have been developed. The principal problem is a lack of suitable tunable sources of local oscillator power. |
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