| 气相外延生长的ZnSe单晶薄膜及电致发光 |
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| 引用本文： | 史其武.气相外延生长的ZnSe单晶薄膜及电致发光[J].发光学报,1982,3(1):23-28. |
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| 作者姓名： | 史其武 |
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| 作者单位： | 中国科学院长春物理研究所 |
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| 摘 要： | 用窄空间外延方法,在GaAs(100)衬底上外延生长了ZnSe(100)单晶薄膜.实验条件是,T衬=550℃,T源=650℃,H2-HCl气流速率为0.4-0.45l/min,生长速率为0.25-0.3μ/h.外延片在700℃的Zn和MnCl2蒸气中处理40-60分钟,以降低ZnSe的电阻率及掺入杂质Mn.利用这一外延层制作了MS结发光二极管,在反向偏压下获得黄色电致发光.
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ZnSe SINGLE-CRYSTAL FILMS GROWN FROM VAPOR PHASE EPITAXY AND THEIR ELECTROLUMINESCENCE |
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| Shi Qi-wu.ZnSe SINGLE-CRYSTAL FILMS GROWN FROM VAPOR PHASE EPITAXY AND THEIR ELECTROLUMINESCENCE[J].Chinese Journal of Luminescence,1982,3(1):23-28. |
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| Authors: | Shi Qi-wu |
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| Institution: | Changchun Institute of physics, Academia sinica |
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| Abstract: | (100) ZnSe single-crystal film have been grown on (100) oriented substrate of GaAs by Colse-spaced epitaxial process. The experimetal conditions are: Tsub=550℃, Tsou=650℃, the gas HOW of H2-HC1 is about 0.4-0.451/min and the growth rate is about 0.25-0.3μ/h. In order to reduce the resistivity of ZnSe and dope with Mn, epitaxial wafers are treated at 700℃ in zn and MnCl2 vapour for 40-60 minutes. MS-junction luminescent diodes have been fabricated. Yellow electroluminescence has been obtained under reverse biased excitation. |
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