| InAs/GaSb超晶格中波焦平面材料的分子束外延技术 |
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| 引用本文： | 徐庆庆,陈建新,周易,李天兴,吕翔,何力.InAs/GaSb超晶格中波焦平面材料的分子束外延技术[J].红外与毫米波学报,2011,30(5):406-408. |
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| 作者姓名： | 徐庆庆 陈建新 周易 李天兴 吕翔 何力 |
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| 作者单位： | 中国科学院上海技术物理研究所中国科学院红外成像材料与器件重点实验室,上海,200083 |
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| 摘 要： | 报道了InAs/GaSb超晶格中波材料的分子束外廷生长技术研究.通过改变GaSb衬底上分子束外延InAs/GaSb超晶格材料的衬底温度,以及界面的优化等,改善超晶格材料的表面形貌和晶格失配,获得了晶格失配△a/a=1.5×10-4,原子级平整表面的InAs/GaSb超晶格材料,材料77 K截止波长为4.87 μm.
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| 关 键 词： | InAs/GaSb 超晶格 分子束外延 |
| 收稿时间： | 2010/12/3 0:00:00 |
| 修稿时间： | 2010/12/27 0:00:00 |
Mid-wavelength infrared InAs/GaSb superlattice grown by molecular beam epitaxy |
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| XU Qing-Qing,CHEN Jian-Xin,ZHOU Yi,LI Tian-Xing,LV Xiang and HE Li.Mid-wavelength infrared InAs/GaSb superlattice grown by molecular beam epitaxy[J].Journal of Infrared and Millimeter Waves,2011,30(5):406-408. |
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| Authors: | XU Qing-Qing CHEN Jian-Xin ZHOU Yi LI Tian-Xing LV Xiang and HE Li |
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| Institution: | Key Laboratory of infrared image materials and devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of infrared image materials and devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of infrared image materials and devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences and Key Laboratory of infrared image materials and devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences |
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| Abstract: | |
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| Keywords: | InAs/GaSb superlattice molecular beam epitaxy(MBE) |
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