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GaAs/AlGaAs异质结的微波调制反射谱
引用本文:钱轩,谷晓芳,姬扬.GaAs/AlGaAs异质结的微波调制反射谱[J].红外与毫米波学报,2011,30(6):486-489.
作者姓名:钱轩  谷晓芳  姬扬
作者单位:中国科学院半导体研究所超晶格国家重点实验室,北京,100083
基金项目:国家自然科学基金项目(面上项目,重点项目,重大项目),国家重点基础研究发展计划(973计划)
摘    要:基于搭建的微波调制反射谱测量系统(MMRS),确定了GaAs/AlGaAs异质结构中价带空穴到二维电子系统(2DES)电子基态(GS)的跃迁.微波调制反射谱与温度的依赖关系表明,随着测量温度的升高,能带带隙发生了蓝移现象;而其与磁场的依赖关系表明,随着测量磁场的增大,能带带隙则发生了红移现象;它们均与GaAs/AlGa...

关 键 词:微波调制反射谱  二维电子系统
收稿时间:2010/12/27 0:00:00
修稿时间:2011/6/15 0:00:00

Microwave-modulated reflectance spectroscopy in a GaAs/AlGaAs heterostructure
QIAN Xuan,GU Xiao-Fang and JI Yang.Microwave-modulated reflectance spectroscopy in a GaAs/AlGaAs heterostructure[J].Journal of Infrared and Millimeter Waves,2011,30(6):486-489.
Authors:QIAN Xuan  GU Xiao-Fang and JI Yang
Institution:SKLSM, Institute of Semiconductors, Chinese Academy of Sciences,Institute of Semiconductors, Chinese Academy of Sciences,Institute of Semiconductors, Chinese Academy of Sciences
Abstract:A microwave-modulated reflectance spectroscopy (MMRS) measurement system was constructed and this MMRS technique was used to identify a transition from holes in valence band to electrons in the ground subband (GS) of the two-dimensional electron system (2DES) embedded in a GaAs/AlGaAs heterostructure sample. The temperature (T) dependence of the MMRS shows a blue shift of the energy gap with increasing T, while the magnetic field (B) dependence of the MMRS shows a red shift of the energy gap with increasing B: both phenomena are attributed to the bandfilling effect of holes in valence band in the GaAs/AlGaAs heterostructure. A theoretical simulation based on Kramers-Kronig relation was also presented which was comparable with the experimental data.
Keywords:microwave-modulated reflectance spectroscopy  two-dimensional electron system  
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