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Epitaxial fabrication of AgTe monolayer on Ag(111) and the sequential growth of Te film
Authors:Haoyu Dong  Le Lei  Shuya Xing  Jianfeng Guo  Feiyue Cao  Shangzhi Gu  Yanyan Geng  Shuo Mi  Hanxiang Wu  Yan Jun Li  Yasuhiro Sugawara  Fei Pang  Wei Ji  Rui Xu  Zhihai Cheng
Institution:1. Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China2. Department of Applied Physics, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
Abstract:Transition-metal chalcogenides (TMCs) materials have attracted increasing interest both for fundamental research and industrial applications. Among all these materials, two-dimensional (2D) compounds with honeycomb-like structure possess exotic electronic structures. Here, we report a systematic study of TMC monolayer AgTe fabricated by direct depositing Te on the surface of Ag(111) and annealing. Few intrinsic defects are observed and studied by scanning tunneling microscopy, indicating that there are two kinds of AgTe domains and they can form gliding twin-boundary. Then, the monolayer AgTe can serve as the template for the following growth of Te film. Meanwhile, some Te atoms are observed in the form of chains on the top of the bottom Te film. Our findings in this work might provide insightful guide for the epitaxial growth of 2D materials for study of novel physical properties and for future quantum devices.
Keywords:AgTe monolayer  Te film  epitaxial growth  scanning tunneling microscopy  two-dimensional materials  transition-metal chalcogenides  
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