Optoelectronic characteristics and application of black phosphorus and its analogs |
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Authors: | Ying-Ying Li Bo Gao Ying Han Bing-Kun Chen Jia-Yu Huo |
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Institution: | College of Communication Engineering, Jilin University, Changchun 130012, China |
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Abstract: | The tunable bandgap from 0.3 eV to 2 eV of black phosphorus (BP) makes it to fill the gap in graphene. When studying the properties of BP more comprehensive, scientists have discovered that many twodimensional materials, such as tellurene, antimonene, bismuthene, indium selenide and tin sulfide, have similar structures and properties to black phosphorus thus called black phosphorus analogs. In this review, we briefly introduce preparation methods of black phosphorus and its analogs, with emphasis on the method of mechanical exfoliation (ME), liquid phase exfoliation (LPE) and chemical vapor deposition (CVD). And their characterization and properties according to their classification of singleelement materials and multi-element materials are described. We focus on the performance of passively mode-locked fiber lasers using BP and its analogs as saturable absorbers (SA) and demonstrated this part through classification of working wavelength. Finally, we introduce the application of BP and its analogs, and discuss their future research prospects. |
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Keywords: | black phosphorus and its analogs passively mode-locked fiber lasers optoelectronic characteristics saturable absorber |
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