(1) Fachbereich Physik, Martin-Luther-Universität Halle, Friedemann-BAch-Platz 6, D-06108 Halle, Germany;(2) Institut für Halbleiter- und Mikrosystemtechnik, Technische Universität Dresden, Nöthnitzer Strasse 64, D-01187 Dresden, Germany
Abstract:
We develop a theory of the photoacoustic effect of semiconductor quantum wells. Assuming a multilayer system of optically uniaxial media with dissipation we describe the generation of heat and the conduction of the heat through the system by a generalized transfer-matrix method. It is shown by applying this theory to a semiconductor quantum well that the photoacoustic signal is very sensitive on the quantum-size effect and the longitudinal and transverse relaxation times. Our theory predicts that photoacoustics should be a profitable method for the investigation of semiconductor micro- and nanostructures.