Near-infrared luminescence of OH and Cl doped Bi4Ge3O12 crystals |
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| Authors: | Pingsheng Yu Liangbi SuJun Xu |
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| Institution: | a School of Materials Engineering, Yancheng Institute of Technology, Yancheng, Jiangsu 224051, China
b Key Laboratory of Transparent and Opto-Functional Inorganic Materials, Chinese Academy of Sciences, Shanghai Institute of Ceramics, Shanghai 200050, China |
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| Abstract: | OH− and Cl− doped Bi4Ge3O12 (BGO) single crystals had been grown by Vertical Bridgman (VB) method. The structure of these crystals was determined by XRD, the transmittance and emission spectra in near infrared region (NIR) were measured at room temperature. 5% OH− doped BGO shows a significant emission band peaking around 1181 nm under 808 nm laser diodes (LDs) excitation, and the 5% Cl− doped BGO exhibits a relatively weak emission band as well. 100% and 5% OH− doped BGO show noticeable emission band centered at about 1346 nm under 980 nm LDs excitation. |
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| Keywords: | Bi4Ge3O12 OH&minus doped Cl&minus doped |
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