| 超晶格中GaAs/InGaAs界面与InGaAs/GaAs界面的特性差异 |
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| 引用本文： | 王小军,金星,张子平,郑联喜,肖智博,胡雄伟,王启明. 超晶格中GaAs/InGaAs界面与InGaAs/GaAs界面的特性差异[J]. 物理学报, 1997, 46(9): 1808-1816 |
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| 作者姓名： | 王小军 金星 张子平 郑联喜 肖智博 胡雄伟 王启明 |
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| 作者单位： | (1)中国科学院半导体研究所国家光电子工艺中心; (2)中国科学院半导体研究所集成光电子学国家重点实验室; (3)中国科学院北京电子显微镜实验室 |
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| 摘 要： | InxGa1-xAs缓冲层上生长InyGa1-yAs/GaAs超晶格（x＜y）．阱层处于压缩应变，垒层处于伸张应变，其厚度均小于Mathews-Blakeslee（M-B）平衡理论计算的临界厚度．透射电子显微镜及俄歇电子能谱、二级离子质谱测试发现，GaAs/InyGa1-yAs界面铟组分过渡区比InyGa1-yAs/GaAs界面铟组关键词：
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| 关 键 词： | 超晶格 砷化镓 铟镓砷 界面特性 半导体 |
| 收稿时间： | 1996-04-08 |
DIFFERENCES BETWEEN THE INTERFACES OF InGaAs/GaAs AND GaAs/InGaAs IN SUPERLATTICES |
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| WANG XIAO-JUN,JIN XING,ZHANG ZI-PING,ZHENG LIAN-XI,XIAO ZHI-BO,HU XIONG-WEI and WANG QI-MING. DIFFERENCES BETWEEN THE INTERFACES OF InGaAs/GaAs AND GaAs/InGaAs IN SUPERLATTICES[J]. Acta Physica Sinica, 1997, 46(9): 1808-1816 |
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| Authors: | WANG XIAO-JUN JIN XING ZHANG ZI-PING ZHENG LIAN-XI XIAO ZHI-BO HU XIONG-WEI WANG QI-MING |
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| Abstract: | The InyGa1-y As/GaAs superlattice with an InxGa1-x As (xyGA1-yAs interface was narrower than that at the InyGa1-y As/GaAs interface; in InyGa1-yAs alloy layer, the composition near the GaAs/InyGa1-y As interface was larger than that near the other interface. For the first time, we have explained the composition profile in these kinds of superlattices based on the indium segregation theory. In addition, a new strain relaxation model was presented to explain the differences in the smoothness between the two interfaces. |
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