Field-asymmetric transverse magnetoresistance in a nonmagnetic quantum-size structure |
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Authors: | A A Gorbatsevich Yu V Kopaev I V Kucherenko O E Omel’yanovskii V I Tsebro V V Kapaev |
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Institution: | (1) P. N. Lebedev Physics Institute, Russian Academy of Sciences, 117924 Moscow, Russia;(2) Moscow Institute of Electronics, 103498 Moscow, Russia |
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Abstract: | A new phenomenon is observed experimentally in a heavily doped asymmetric quantum-size structure in a magnetic field parallel
to the quantum-well layers — a transverse magnetoresistance which is asymmetric in the field (there can even be a channge
in sign) and is observed in the case that the structure has a built-in lateral electric field. A model of the effect is proposed.
The observed asymmetry of the magnetoresistance is attributed to an additional current contribution that arises under nonequilibrium
conditions and that is linear in the gradient of the electrochemical potential and proportional to the parameter characterizing
the asymmetry of the spectrum with respect to the quasimomentum.
Pis’ma Zh. éksp. Teor. Fiz. 68, No. 5, 380–385 (10 September 1998) |
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