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AC and DC Conductivities in an n-GaAs/AlAs Heterostructure with a Wide Quantum Well in the Integer Quantum Hall Effect Regime
Authors:Dmitriev  A. A.  Drichko  I. L.  Smirnov  I. Yu.  Bakarov  A. K.  Bykov  A. A.
Affiliation:1.Ioffe Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia
;2.ITMO University, St. Petersburg, 197101, Russia
;3.Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia
;4.Novosibirsk State University, Novosibirsk, 630090, Russia
;
Abstract:
Keywords:
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