Direct observation of elemental segregation in InGaN nanowires by X‐ray nanoprobe |
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| Authors: | J Segura‐Ruiz G Martinez‐Criado J A Sans R Tucoulou P Cloetens I Snigireva C Denker J Malindretos A Rizzi M Gomez‐Gomez N Garro A Cantarero |
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| Institution: | 1. European Synchrotron Radiation Facility, Experiments Division, 38043 Grenoble, France;2. Georg‐August‐University G?ttingen, IV. Physikalisches Institut, 37077 G?ttingen, Germany;3. University of Valencia, Materials Science Institute, 46071 Valencia, Spain |
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| Abstract: | Using synchrotron radiation nanoprobe, this work reports on the elemental distribution in single Inx Ga1–xN nanowires (NWs) grown by molecular beam epitaxy directly on Si(111) substrates. Single NWs dispersed on Al covered sapphire were characterized by nano‐X‐ray fluorescence, Raman scattering and photoluminescence spectroscopy. Both Ga and In maps reveal an inhomogeneous axial distribution inside sin‐ gle NWs. The analysis of NWs from the same sample but with different dimensions suggests a decrease of In segregation with the reduction of NW diameter, while Ga distribution seems to remain unaltered. Photoluminescence and Raman scattering measurements carried out on ensembles of NWs exhibit relevant signatures of the compositional disorder. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | X‐ray fluorescence X‐ray nanoprobe InGaN nanowires |
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