Standard‐free composition measurements of Alx In1–xN by low‐loss electron energy loss spectroscopy |
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| Authors: | Justinas Palisaitis Ching‐Lien Hsiao Muhammad Junaid Mengyao Xie Vanya Darakchieva Jean‐Francois Carlin Nicolas Grandjean Jens Birch Lars Hultman Per O Å Persson |
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| Institution: | 1. Department of Physics, Chemistry and Biology (IFM), Link?ping University, 58183 Link?ping, Sweden;2. Ecole Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland |
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| Abstract: | We demonstrate a standard‐free method to retrieve compositional information in Alx In1–xN thin films by measuring the bulk plasmon energy (Ep), employing electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM). Two series of samples were grown by magnetron sputter epitaxy (MSE) and metal organic vapor phase epitaxy (MOVPE), which together cover the full com‐ positional range 0 ≤ x ≤ 1. Complementary compositional measurements were obtained using Rutherford backscattering spectroscopy (RBS) and the lattice parameters were obtained by X‐ray diffraction (XRD). It is shown that Ep follows a linear relation with respect to composition and lattice parameter between the alloying elements from AlN to InN allowing for straightforward compositional analysis. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | AlInN low‐loss EELS thin films compositional analysis |
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