Dynamic photoluminescence lifetime imaging for the characterisation of silicon wafers |
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Authors: | Sandra Herlufsen Klaus Ramspeck David Hinken Arne Schmidt Jens Müller Karsten Bothe Jan Schmidt Rolf Brendel |
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Affiliation: | 1. Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal, Germany;2. Now with Schott Solar AG, Carl‐Zeiss‐Stra?e 4, 63755 Alzenau, Germany |
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Abstract: | We present a fast and calibration‐free carrier lifetime imaging technique based on photoluminescence (PL) measurements using an InGaAs camera for the examination of crystalline silicon wafers. The carrier lifetime is determined from the time dependent luminescence emission after optical excitation. A ratio, including four PL images acquired at different times during the modulated excitation, is calculated and found to depend only on the camera integration time and the effective carrier lifetime. Therefore, the carrier lifetime is unambiguously determined by this ratio without knowing any additional wafer parameter. We demonstrate the applicability of the dynamic PL technique to multicrystalline silicon wafers. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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Keywords: | lifetime Si wafers photoluminescence imaging |
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