High vertical breakdown strength in with low specific on‐resistance AlGaN/AlN/GaN HEMTs on silicon |
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| Authors: | S Arulkumaran S Vicknesh G I Ng Z H Liu S L Selvaraj T Egawa |
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| Institution: | 1. MMIC Design Centre, Temasek Laboratories@NTU, Nanyang Technological University, 50 Nanyang Drive, Research Techno Plaza, Singapore 637553, Singapore;2. School of EEE, Division of Microelectronics, Nanyang Technological University, Singapore 639798, Singapore;3. Research Centre for Nano‐Device and System, Nagoya Institute of Technology, Nagoya 466‐8555, Japan |
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| Abstract: | Off‐state and vertical breakdown characteristics of AlGaN/AlN/GaN high‐electron‐mobility transistors (HEMTs) on high‐resistivity (HR)‐Si substrate were investigated and analysed. Three‐terminal off‐state breakdown (BVgd) was measured as a function of gate–drain spacing (Lgd). The saturation of BVgd with Lgd is because of increased gate leakage current. HEMTs with Lgd = 6 µm exhibited a specific on‐resistance RDSON] of 0.45 mΩ cm2. The figure of merit (FOM = BVgd2/RDSON]) is as high as 2.0 × 108 V2 Ω–1 cm–2, the highest among the reported values for GaN HEMTs on Si substrate. A vertical breakdown of ～1000 V was observed on 1.2 µm thick buffer GaN/AlN grown on Si substrate. The occurrence of high breakdown voltage is due to the high quality of GaN/AlN buffer layers on Si substrate with reduced threading dislocations which has been confirmed by transmission electron microscopy (TEM). This indicates that the AlGaN/AlN/GaN HEMT with 1.2 µm thick GaN/AlN buffer on Si substrate is promising candidate for high‐power and high‐speed switching device applications. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | AlGaN GaN HEMTs transistors device characteristics breakdown strength on‐resistance |
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