First evidence of resistive switching in polycrystalline GaV4S8 thin layers |
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| Authors: | Emeline Souchier Laurent Cario Benoit Corraze Philippe Moreau Pascale Mazoyer Claude Estournès Richard Retoux Etienne Janod Marie‐Paule Besland |
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| Institution: | 1. Institut des Matériaux Jean Rouxel, Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes, France;2. STMicroelectronics, 850 rue Jean Monnet, 38920 Crolles, France;3. CIRIMAT, UMR CNRS 5085 – UPS –INP, 118 route de Narbonne 31062 Toulouse Cedex 4, France;4. CRISMAT, UMR CNRS 6508, ENSICAEN, 6 Bd Maréchal Juin, 14050 Caen Cedex 4, France |
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| Abstract: | Recently a new type of reversible and non‐volatile resistive switching was discovered in single crystals of Mott insulators AM4X8 (A = Ga, Ge; M = V, Nb, Ta; X = S, Se). Here we report on the first synthesis of thin layers (thicknesses in the 100 to 1000 nm range) of GaV4S8 by RF magnetron sputtering process. Energy dispersive spectroscopy, X‐ray diffraction and TEM analyses attest the high quality of polycrystalline GaV4S8 thin layers. Electrical measurements demonstrate that deposited GaV4S8 thin films exhibit a non‐volatile reversible resistive switching at room temperature with writing/erasing times of ～10 µs and a memory window (Rhigh – Rlow)/ Rlow > 33%. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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| Keywords: | thin films resistive switching GaVS magnetron sputtering |
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