Wide band gap and p‐type conductive Cu–Nb–O films |
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Authors: | Seiji Yamazoe Shunsuke Yanagimoto Takahiro Wada |
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Affiliation: | Department of Materials Chemistry, Ryukoku University, Seta, Otsu 520‐2194, Japan |
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Abstract: | Cu–Nb–O films with a thickness of ca. 150 nm were prepared on borosilicate glass substrates using CuNbO3 ceramic target at substrate temperature of 500 °C by pulsed laser deposition. The X‐ray diffraction patterns showed that the Cu–Nb–O films were amorphous or an aggregation of fine crystals. The post‐annealed film at 300 °C in N2 gas showed 80% transmission in visible light (band gap = 2.6 eV) and high p‐type conductivity of 21 S cm–1. The Cu–Nb–O film with a thickness of 100 nm, fabricated from the target with a composition of Cu/Nb = 0.9, showed the highest p‐type conductivity of 116 S cm–1. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
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Keywords: | p‐type conductive oxides transparent conductive oxides thin films Cu− Nb− O |
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