Large magnetoresistance and perfect spin filter effect in Fe doped SnS2 half-metallic monolayers: A first principles study |
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| Authors: | Yi Liu Shaoqiang Guo Jiangang Yu Huicai Zhong |
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| Institution: | 1. School of Physics and Electronic Science, Zunyi Normal University, Zunyi 563006, PR China;2. School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, PR China;3. Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, PR China |
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| Abstract: | In this work, the spin-resolved transport properties of the Fe doped SnS2 monolayer devices have been investigated. The results show that the doping systems have the transport properties of negative differential resistance, large magnetoresistance effect and near 100% spin polarization effect when the magnetization directions of two electrodes are in parallel. Moreover, the mechanisms for the properties also have been discussed. The original reason of these results could be due to the half-metallic of the doping system. Our results imply that Fe doped SnS2 monolayer is a promising candidate for the future spintronic devices. |
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| Keywords: | Negative differential resistance Spin-filtering effects Large magnetoresistance Half-metallic |
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