| 分子束外延法生长的低阻硒化锌(ZnSe)单晶膜及其在电子器件上的应用 |
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| 引用本文： | 三岛友义,北川文孝,高桥清,王全坤.分子束外延法生长的低阻硒化锌(ZnSe)单晶膜及其在电子器件上的应用[J].发光学报,1982,3(4):25-31. |
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| 作者姓名： | 三岛友义 北川文孝 高桥清 王全坤 |
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| 作者单位： | 1. 日本东京工业大学工学部电子物理系;2. 中国科学院长春物理研究所 |
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| 摘 要： | 用分子束外延技术生长了ZnSe单晶.对未掺杂的和掺Ga的低阻ZnSe的生长和性能进行了讨论.掺Ga的ZnSe,最低电阻率为0.073Ω·cm.这种技术生长的ZnSe,在制作太阳能电池和电致发光器件上的某些有意义的应用也进行了报导.
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| 收稿时间： | 1982-09-25 |
PREPARATION OF LOW-RESISTIVITY ZnSe THIN FILMS BY MOLECULAR BEAM EPITAXY AND APPLICATIONS TO ELECTRONIC DEVICES |
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| Tomoyoshi MISHIMA,Fumitaka KlTAGAWA,Kiyoshi TAKAHASHI,Wang Quan-kun.PREPARATION OF LOW-RESISTIVITY ZnSe THIN FILMS BY MOLECULAR BEAM EPITAXY AND APPLICATIONS TO ELECTRONIC DEVICES[J].Chinese Journal of Luminescence,1982,3(4):25-31. |
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| Authors: | Tomoyoshi MISHIMA Fumitaka KlTAGAWA Kiyoshi TAKAHASHI Wang Quan-kun |
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| Institution: | 1. Faculty of Engineering, Tokyo Institute of Technology;2. Changchun Institute of Physics, Academia Sinica |
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| Abstract: | ZnSe single crystal thin films were grown on GaAs substrates by molecular beam epitaxy (MBE).The MBE growth and characterization of undoped and Ga-doped,low-resistivity ZnSe epilayers are discussed.The lowest resistivity of the Ga-doped ZnSe is 0.073 ohm·cm. Some interesting applications of ZnSe-MBE to such electronic devices as solar cell and EL cell are reported. |
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