Superconductor/semiconductor nanostructures on p-type InAs |
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| Affiliation: | 1. Department of Chemistry, Institute for Advanced Studies in Basic Sciences (IASBS), Zanjan, 45137-66731, Iran;2. Center of Climate Change and Global Warming, Institute for Advanced Studies in Basic Sciences (IASBS), Zanjan, 45137-66731, Iran;3. Department of Chemistry, Dalhousie University, P.O. Box 15000, Halifax, Nova Scotia, B3H 4R2, Canada;1. Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra, India;2. Department of Engineering Physics, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra, India;3. Center for Research in Nanotechnology and Science, Indian Institute of Technology Bombay, Mumbai 400076, Maharashtra, India;1. Universidad de la República, Facultad de Ciencias, Laboratorio de Electroquímica Fundamental, Núcleo Interdisciplinario Ingeniería Electroquímica, Igua 4225, CP 11400 Montevideo, Uruguay;2. Universidad de la República, Crystallography, Solid State and Materials Laboratory (Cryssmat-Lab), DETEMA, Centro NanoMat, Polo Tecnológico de Pando, Espacio Interdisciplinario, Facultad de Química, Montevideo, Uruguay;1. Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran 1477893855, Iran;2. Photonics and Nanocrystal Research Lab. (PNRL), Faculty of Electrical and Computer Engineering, University of Tabriz, Tabriz, Iran;3. School of Engineering-Emerging Technologies, University of Tabriz, Tabriz, Iran;4. Faculty of Electrical & Computer Engineering, Advanced Devices Simulation Lab, Tarbiat Modares University, Tehran 1411713116, Iran |
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| Abstract: | Recent experimental results for Nb/p-type InAs/Nb Josephson junctions are reviewed. In these devices, the superconducting Nb electrodes are coupled through the native inversion layer at the surface of p-type InAs. Besides the dc and ac Josephson effects, we discuss the opening of a proximity-effect induced energy gap in the density of states of the inversion layer where it is covered by Nb. In field-effect controlled devices, the short electrode separation comparable to the mean free path allows the observation of Fabry–Pérot type resonances in the current–voltage characteristics. |
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