High-quality two-dimensional electron gas at an inverted undoped heterointerface |
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| Institution: | 1. Institute of Physics CAS, v. v. i., Cukrovarnická 10, 162 00 Prague 6, Czech Republic;2. Czech Technical University in Prague, Faculty of Nuclear Sciences and Physical Engineering, Břehová 7, 115 19, Prague 1, Czech Republic;1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;2. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China;1. Department of Industrial Engineering (ETEC Division), University of Naples Federico II, P.le Tecchio 80, 80125 Naples, Italy;2. Department of Architectural Engineering, The Pennsylvania State University, University Park, PA, USA |
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| Abstract: | A back-gated undoped heterostructure, in which a two-dimensional electron gas (2DEG) is formed at the inverted undoped heterointerface through the back-side field effect, offers the possibility of high mobility and the feasibility of fabricating several kinds of back-gated structures. We used such a 2DEG system to fabricate a Corbino-disk structure. The results for the back-gated Corbino-disk structure show that the density of the 2DEG is well controlled by the back-gate bias and the fine structures corresponding to the integer and fractional quantized Hall effects are clearly observed, reflecting the high quality of the 2DEG formed in the undoped heterostructure. The characteristics in a low magnetic field region confirm the homogeneous back-gate control of the 2DEG down to a density of less than 1010cm−2. |
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