A new piezoelectric single crystal obtained by Ge doping in the SiO2 structure

The interest of Si_1–xGe_xO₂ single crystals with alpha‐quartz structure is connected to improvement of electromechanical coefficients and rise of α – β phase transition of quartz one. Growth of an α‐Si_xGe_1–xO₂ crystal was realized by a hydrothermal method of temperature gradient in autoclaves, made from Cr–Ni alloys. Nutrient material was prepared from synthetic quartz as crashed rods and placed in the bottom of autoclaves. There was loaded GeO₂ powder additive in proportions to quartz nutrient. Single crystals were investigated by electron microprobe analysis, X‐ray diffraction and atomic force microscopy. The most important result, which was obtained during the investigations, is an experimental proof of growth of α‐Si_xGe_1–xO₂ single crystals under the hydrothermal conditions. The present results thus open the possibility to tune the piezoelectric properties of these materials by varying the chemical composition. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)