SQUID magnetometry,EPR and XPS characterization of Y3Al5O12: Co,Si single crystals

Single crystals of garnet Y₃Al₅O₁₂ (YAG): Co and Co, Si were grown by Czochralski method as materials for optoelectronic applications. Silicon doping is responsible for the change of the Co³⁺ ions into Co²⁺ in order to keep charge neutrality of the material and for a coloration of materials. Magnetization and Electron Paramagnetic Resonance measurements show that the most cobalt ions in the silicon co‐doped crystals were Co²⁺ in octahedral positions. Estimated concentration of the Co²⁺ ions were close to Si⁴⁺ nominal concentration. A little excess of Co²⁺ may be ascribed to defects present in the crystals. For the crystal doped only with Co, the concentration of Co²⁺ was about 13% of the nominal Co amount and might be caused by crystal defects. X‐ray Photoelectron Spectroscopy measurements exhibit aluminium deficiency. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)