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Gas-source MBE growth of freestanding Si nano-wires on Au/Si substrate
Institution:1. Department of Chemical and Materials Engineering, Shahrood University of Technology, Shahrood, Iran;2. Department of Mechanical Engineering, 10-367 Donadeo Innovation Centre for Engineering, University of Alberta, Edmonton, AB T6G 1H9, Canada;3. Advanced Membrane Technology Research Centre (AMTEC), Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia;4. Department of Chemical and Biological Engineering, University of Ottawa, 161 Louis Pasteur Street, Ontario K1N 6N5, Canada
Abstract:Freestanding Si nano-wires were grown by gas source molecular beam epitaxy on Au/Si (100), (111), (110), and (113) substrates. The morphology of Si nano-wires is investigated using scanning electron microscopy. This method provides a possible way to fabricate silicon quantum wires.
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