首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Raman scattering study on Ga1–x Mnx As prepared by Mn ions implantation,deposition and post‐annealing
Authors:M R Islam  N F Chen  M Yamada
Abstract:Raman scattering measurements have been performed in Ga1–x Mnx As crystals prepared by Mn ions implantation, deposition, and post‐annealing. The Raman spectrum measured from the implanted surface of the sample shows some weak phonon modes in addition to GaAs‐like phonon modes, where the GaAs‐like LO and TO phonons are found to be shifted by approximately 4 and 2 cm‐1, respectively, in the lower frequency direction compared to those observed from the unimplanted surface of the sample. The weak vibrational modes observed are assigned to hausmannite Mn3O4 like. The coupled LO‐phonon plasmon mode (CLOPM), and defects and As related vibrational modes caused by Mn ions implantation, deposition, and post‐annealing are also observed. The compositional dependence of GaAs‐like LO phonon frequency is developed for strained and unstrained conditions and then using the observed LOGaAs peak, the Mn composition is evaluated to be 0.034. Furthermore, by analyzing the intensity of CLOPM and unscreened LOGaAs phonon mode, the hole density is evaluated to be 1.84×1018 cm‐3. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Keywords:Raman scattering  ferromagnetic  semiconductor  GaMnAs  Mn ions implantation  deposition
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号