Lineshape analysis of photoreflectance spectra from InGaAs/GaAs quantum wells |
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| Institution: | 1. Department of Physics, Yeungnam University, Gyeongsan, 38541, South Korea;2. Korea Research Institute of Standards and Science, Daejeon, 34113, South Korea;3. Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S13JD, UK;1. Institute for Systems based on Optoelectronics and Microtechnology (ISOM), Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain;2. COBRA Inter-University Research Institute, Department of Applied Physics, Eindhoven University of Technology, NL-5600 MB Eindhoven, The Netherlands;3. Departamento de Ciencia de los Materiales e IM y QI, Universidad de Cádiz, 11510 Puerto Real (Cádiz), Spain |
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| Abstract: | The fundamental optical transitions in In0.15Ga0.85As/GaAs single symmetric quantum wells (QWs) are studied through photoreflectance (PR) measurements and their dependence on the well distance from the surface. A phase rotation of the lineshape of the PR signal is observed as was predicted in our previous works. PR spectra of several samples, measured at 77 K, are compared with results of PR lineshape calculations, and a fairly good agreement is found. The quantum-confined Stark effect is shown to be the dominant modulation mechanism in the QW. Pronounced interference effects make PR spectra from QWs sensitive to the cap layer thickness. |
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