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Mean free path of ballistic electrons in GaAs/AlGaAs superlattices |
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| Institution: | 1. Lviv Institute of Economics and Tourism, 8, Mentsynskyi Str., Lviv 79007, Ukraine;2. S.Z. Gzhytskyj Lviv National University of Veterinary Medicine and Biotechnologies, 50, Pekarska Str., Lviv 79010, Ukraine;3. Lviv Polytechnic National University, 12, Bandera Str., Lviv 79013, Ukraine;4. Ivan Franko National University of Lviv, 6, Kyrylo & Mefodiy Str., Lviv 79005, Ukraine;5. National University of Forest and Wood Technology of Ukraine, 103, Chuprynka Str., Lviv 79057, Ukraine;1. Furukawa Electric Institute of Technology Ltd., Budapest H1158, Hungary;2. Budapest University of Technology and Economics, Department of TMI, Budapest H1117, Hungary;3. OFS Laboratories, Somerset, NJ 08873, USA;4. Furukawa Electric Co. Ltd., Chiba, Japan |
| Abstract: | The mean free path of ballistic electrons in GaAs/AlGaAs superlattices was measured using the technique of hot electron spectroscopy in magnetic fields perpendicular to the growth direction. We utilize the fact that the total effective path of an injected hot electron is a function of the applied magnetic field. For a superlattice with 6.5 nm GaAs wells and 2.5 nm GaAlAs barriers we measure a mean free path of 80 nm. The experimental results of a ten-period SL sample are compared to a fully three-dimensional calculation of the transmission including interface roughness with island sizes of 10 nm. We demonstrate that the observed mfp is limited due to interface roughness scattering for temperatures up to 50 K. |
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