Optical nutation in a magnetized semiconductor quantum well structure |
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Affiliation: | Department of Applied Physics, Shri G. S. Institute of Technology & Science, Indore, 452003, India;Department of Physics, Yasouj University, Yasouj 75914-353, Iran |
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Abstract: | Using the semiclassical coherent radiation—semiconductor interaction model, optical nutation has been analysed in aGaAs / AlxGa1 − xAs quantum well structure (QWS) assumed to be immersed in a moderately strong magnetic field and irradiated by a not-too-strong near band gap resonant femtosecond pulsed Ti–sapphire laser. The finite potential well depth of the QWS and the Wannier–Mott excitonic structure of the crystal absorption edge is taken into account. The excitation intensity is assumed to be below the Mott transition where the various many-body effects have been neglected with adequate reasoning. Numerical analysis made for a GaAs quantum well of thickness ∼ 100 Åand the confining layers ofAlxGa1 − xAs withx = 0.3 at intensity I ≤ 5 × 106Wcm − 2reveals that the real and imaginary parts of the transient complex-induced polarization are enhanced with an increase in the magnetic field and their ringing behaviour confirms the occurrence of optical nutation in the QWS. |
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